In table 5 the specification is given for the NIR spectrometers, in figure 5 and figure 6 the spectral response curve for the different detector types are depicted. ** Photo Response Non-Uniformity = max difference between output of pixels when uniformly illuminated, divided by average signal Photons/count 8 µm fiber) in counts/µW per ms integration time Table 4 Detector Specifications (based on a 16-bit AD converter High resolution 76 m pixel pitch (6.5 lp/mm. The entrance of the bench is an 8 µm core diameter fiber, connected to a standard AvaLight-HAL halogen light source. This extremely robust and waterproof digital detector array (DDA) has been specially developed for maximum. To compare the different detector arrays we have assumed an optical bench with 600 lines/mm grating and no DCL. This pixel array detector (PAD), the rst PAD (of either the integrating or photon-counting variety) to be used for hard X-ray synchrotron science applications, has been used to study shock waves (MacPhee et al., 2002), fuel injection cycles (Liu et al. In Table 4 the overall sensitivity is given for the detector types currently used in the UV/VIS AvaSpec spectrometers as output in counts per ms integration time for a 16-bit AD converter. The quartz lens (DCL-UV for AvaSpec-2048/3648) will increase the system sensitivity by a factor of 3-5, depending on the fiber diameter used. Optionally a DCL cylindrical detector collection lens can be mounted directly on the detector array. 61圆3 mm2 silicon area 16 million pixels 4Kx4K array Analogue outputs Frame rate in excess of video rate. Henderson Group), FEI and Max Planck Institute. However, the relative low cost of fabrication for prototyping CMOS ICs enables chips with one, two, dozens or thousands of detectors to be designed, fabricated and tested. Electron Detector and FEI CETA ©, developed by STFC in collaboration with LMB (R. Some standard detector specifications can be found in Table 4 detector specifications. Generally, these chips are arrays of smart pixels with significantly more transistors per pixel than the three or four found in typical APS-based arrays. With a given set-up it is possible to do measurements over about 6-7 decades of irradiance levels. 2.0 FPA FABRICATION 2.1 Detector Array Details of the growth and processing of the dual-band QWIP FPAs used in this work have been published in Goldberg, et al.6 Figure 1 shows the device structure schematically and Figure 2 is a scan- ning electron micrograph of several pixels of a dual-band QWIP FPA prior to indium bump deposition. The efficiency curve of the grating used, the size of the input fiber or slit, the mirror performance and the use of a Detector Collection Lens are the main parameters. The relation between light energy entering the optical bench and the amount hitting a single detector pixel depends on the optical bench configuration. With a given A/D converter this can be expressed as the number of counts per mJ of incident radiation. The sensitivity of a detector pixel at a certain wavelength is defined as the detector electrical output per unit of radiation energy (photons) incident to that pixel.
0 kommentar(er)
